Low power embedded one-time programmable (otp) structures

ABSTRACT

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell. A fin structure is formed in the first region. The fin structure includes top and bottom fin portions and includes channel and non-channel regions defined along the length of the fin structure. An isolation layer is formed on the substrate. The isolation layer has a top isolation surface disposed below a top fin surface, leaving the top fin portion exposed. At least a portion of the exposed top fin portion in the channel region is processed to form a sharpened tip profile at top of the fin. A gate having a gate dielectric and a metal gate electrode is formed over the substrate. The gate wraps around the channel region of the fin structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application which claims benefit ofcopending U.S. patent application Ser. No. 14/884,747, filed on Oct. 15,2015, which is herein incorporated by reference in its entirety for allpurposes.

BACKGROUND

Consumer electronic product manufacturers are under heavy pressure toreduce costs, increase performance, minimize power consumption, andincrease security. Configurability and programmability can help inachieving these goals. One-time programmable (OTP) memory is oneapproach that enables configurability and programmability. However,current embedded anti-fuse based OTP structure in fin field effecttransistor (finFET) process requires high programming voltage. This maylead to high power consumption as well as power supply incompatibilitywith logic devices which are not desirable.

Therefore, there is a need to provide an OTP memory device that is areaefficient, requires lower power and has high performance as well asimproved compatibility of power supply with logic device. It is alsodesired to provide simplified and cost effective methods of formingthese devices.

SUMMARY

Embodiments generally relate to semiconductor devices and methods forforming a semiconductor device. In one aspect, a method for forming adevice is disclosed. The method includes providing a substrate preparedwith at least a first region for accommodating an anti-fuse based memorycell. A fin structure is formed in the first region. The fin structureincludes top and bottom fin portions and includes channel andnon-channel regions defined along the length of the fin structure. Anisolation layer is formed on the substrate. The isolation layer has atop isolation surface disposed below a top fin surface, leaving the topfin portion exposed. At least a portion of the exposed top fin portionin the channel region is processed to form a sharpened tip profile attop of the fin. A gate having a gate dielectric and a metal gateelectrode is formed over the substrate. The gate wraps around thechannel region of the fin structure.

In another aspect, a method for forming a device is presented. Themethod includes providing a substrate prepared with at least a firstregion for accommodating an anti-fuse based memory cell and a secondregion for accommodating a logic transistor. Fin structures are formedin the first and second regions. A fin structure includes top and bottomfin portions and includes channel and non-channel regions defined alongthe length of the fin structure. An isolation layer is formed on thesubstrate. The isolation layer has a top isolation surface disposedbelow a top fin surface, leaving the top fin portion of the finstructures exposed. At least a portion of the exposed top fin portion inthe channel region of the fin structure in the first region is processedto form a sharpened tip profile at top of the fin. Gates having a gatedielectric and a metal gate electrode are formed over the substrate inthe first and second regions. A gate wraps around the channel region ofthe fin structure.

In yet another aspect, a device is disclosed. The device includes asubstrate having at least a first region for accommodating an anti-fusebased memory cell. A fin structure is disposed in the first region. Thefin structure includes top and bottom fin portions and includes channeland non-channel regions defined along the length of the fin structure.An isolation layer is disposed on the substrate. The isolation layer hasa top isolation surface disposed below a top fin surface, leaving thetop fin portion exposed. At least a portion of the exposed top finportion in the channel region includes a sharpened tip profile at top ofthe fin. A gate having a gate dielectric and a metal gate electrode isdisposed over the substrate. The gate wraps around the channel region ofthe fin structure.

These and other advantages and features of the embodiments hereindisclosed, will become apparent through reference to the followingdescription and the accompanying drawings. Furthermore, it is to beunderstood that the features of the various embodiments described hereinare not mutually exclusive and can exist in various combinations andpermutations.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and form part ofthe specification in which like numerals designate like parts,illustrate preferred embodiments of the present disclosure and, togetherwith the description, serve to explain the principles of variousembodiments of the present disclosure.

FIGS. 1a-1d show various views of an embodiment of a device;

FIGS. 2a-2d show various views of another embodiment of a device;

FIGS. 3a-3d show various views of another embodiment of a device;

FIGS. 4a-4d show various views of yet another embodiment of a device;

FIGS. 5a-5c show various views of another embodiment of a device;

FIGS. 6a-6h show cross-sectional views of an embodiment of a process forforming a device;

FIGS. 7a-7f show cross-sectional views of another embodiment of aprocess for forming a device;

FIGS. 8a-8f show cross-sectional views of another embodiment of aprocess for forming a device;

FIGS. 9a-9e show cross-sectional views of yet another embodiment of aprocess for forming a device; and

FIGS. 10a-10b show another embodiment of a process for forming a device.

DETAILED DESCRIPTION

Embodiments generally relate to semiconductor devices. Moreparticularly, some embodiments relate to memory devices, such asnon-volatile memory (NVM) devices. The NVM devices, in one embodiment,are anti-fuse based one-time programmable (OTP) memory devices. Theanti-fuse based OTP memory as will be described herein includes a gateelectrode that overlies a fin structure or nanowire, with a gatedielectric configured to provide an anti-fuse unit cell and disposedbetween the fin structure or nanowire and the gate electrode. Theanti-fuse based OTP memory as will be described herein is programmableby applying an electrical stress that creates a low resistanceconductive path, such as a short. Such a short may be achieved by thebreakdown of the gate dielectric. The fin structure or the nanowire ofthe present disclosure includes a sharpened tip profile which enhanceselectric field when voltage is applied between the gate electrode andsubstrate. The high electric field at the sharpened tip allows forcontrolling of the rupture of the gate dielectric during programming ofthe OTP memory. The sharpened tip profile of the fin structure andnanowire reduces the required programming voltage for the OTP memorycell, leading to lower power consumption. Such memory devices, forexample, can be incorporated into standalone devices or system on chips.The devices or ICs can be incorporated into or used with, for example,consumer electronic products, or relate to other types of devices.

FIGS. 1a-1d show various views of an embodiment of a device 100. FIG. 1ashows a simplified top view of a cross-point memory array in a firstregion 102 a and top view of logic components in a second region 102 bwhile FIGS. 1b-12d show corresponding cross-sectional views. FIG. 1bshows a cross-sectional view of the first region 102 a of the devicetaken along A-A′ and FIG. 1c shows a cross-sectional view of the firstregion taken along B-B′. As for FIG. 1d , it shows a cross-sectionalview of the second region 102 b of the device taken along C-C′. Thefirst region 102 a is a memory or array region having a plurality ofmemory cells. In one embodiment, the memory cells are anti-fuse basedOTP memory cells. As for the second region 102 b, it is a logic regionhaving one or more logic transistors. Although two regions are shown, itis understood that other suitable number and types of device regions(not shown) may be included in the device.

Referring to FIGS. 1a-1d , the device includes a substrate 105. Thesubstrate may be a silicon substrate. The substrate may be lightly dopedwith, for example, p-type dopants. Providing other suitable types ofsubstrates, including SiGe, Ge and group III-V semiconductors such asGaAs, InP and InAs, including substrates doped with other types ofdopants or undoped substrates, are also useful. Other suitable types ofsubstrate, such as crystalline-on-insulator which includessilicon-on-insulator (SOT) type of substrate, may also be useful.

As shown, the substrate 105 is prepared with at least a first region 102a for accommodating a plurality of anti-fuse based memory cells andsecond region 102 b for accommodating a plurality of logic transistors.The substrate may also include other device regions (not shown) foraccommodating other types of devices. The memory cells and logictransistors, in one embodiment, are fin-type based devices. Thesubstrate, as shown, includes a plurality of fin structures 110 disposedin the first and second regions. An isolation layer 180 is disposed on asurface of the substrate to isolate the device regions and the finstructures from each other. The isolation layer includes a dielectricmaterial, such as a silicon oxide. Other suitable types of dielectricmaterial may also be useful. The isolation layer, for example, has aheight or thickness sufficient to provide isolation from the substratebelow and between adjacent fin structures. The thickness of theisolation layer, for example, may be about 100-500 nm. Other suitablethickness ranges may also be useful.

The fin structure 110, for example, extends from the top surface of thesubstrate to above and beyond the top surface 180 a of the isolationlayer 180. The fin structure, for example, is an elongated memberdisposed along a first direction (e.g., x-direction). The fin structurehas sufficient length to include a body or channel region (e.g., regionover which a metal gate will be disposed thereon) and non-channelregions (e.g., contact regions of the memory cell or logic transistor).The height of the fin structure should be sufficient to provide top andbottom fin portions which serve as a body of the transistor. The heightof the fin, for example, may be about 40-50 nm. As for the width, it maybe about 5-30 nm. Other suitable fin dimensions may also be useful. Asshown, the fin structure has a top fin portion 111 which protrudesbeyond the top surface 180 a of the isolation layer and a bottom finportion 112 which is embedded within the isolation layer. Doped wells108, such as n-type doped wells, may be disposed in the substrate underthe fin structures in the first and second regions. The doped wells inthe first region serve as bitlines (BL) for the OTP memory cell. Thedoped wells which serve as bitlines are separated from each other bymaterial of the substrate 105 disposed in between the adjacent bitlines.

A dielectric layer 130 is disposed on the substrate in the first region102 a and second region 102 b (not shown in FIG. 1d ). The dielectriclayer, for example, serves as a pre-metal dielectric (PMD) layer. Thedielectric layer, for example, includes a silicon oxide layer. Othersuitable types of dielectric layer may also be useful.

In one embodiment, at least a portion (e.g., channel region) of the finstructures 110 in the first region 102 a includes a sharpened tipprofile 145 over a top of the fin structures 110 as shown in FIGS. 1b-1c. The top of the fin structures having the sharpened tip profileprotrudes and extend beyond the top surface of the PMD layer 130 asshown in FIG. 1b . The tip over the top of the fin structures in thefirst region 102 a is sufficiently sharp to enable the overlying portionof the interfacial layer of the gate dielectric 152 to breakdown easilyduring programming relative to the fin structures in the second region102 b having a substantially planar surface profile as shown in FIG. 1dor a gradient surface profile (not shown).

Metal gates 150 are disposed over the substrate in the first and secondregions as shown in FIGS. 1a-1d . A metal gate 150, as shown, isdisposed over the channel region of the fin structure 110. The metalgate 150 is an elongated member disposed along a second direction (e.g.,y-direction) and traverses one or more fin structures 110 in the firstor second region as shown in FIG. 1a . The metal gate wraps around andcovers exposed top and side surfaces of the fin structure. The metalgate includes a gate dielectric 152 and a metal gate electrode 154disposed over the gate dielectric. The gate dielectric 152, in oneembodiment, includes an interfacial and a high-k gate dielectric stack.The interfacial layer, for example, may be SiO₂ and the high-k gatedielectric layer, for example, may be HfO₂, HfSiON, La₂O₃, zirconiumoxide or silicates thereof. The metal gate electrode, for example,includes TaN or TiN. Other suitable types of gate dielectric materialsand metal gate electrode materials may also be useful. In oneembodiment, the interfacial and high-k gate dielectric stack 152 of themetal gate in the first region 102 a lines the PMD layer 130 and theexposed fin structures having the sharpened tip profile 145 as shown inFIGS. 1b-1c . The interfacial and high-k dielectric stack 152 of themetal gate in the second region 102 b, in one embodiment, lines theisolation layer 180 and the exposed fin structures having thesubstantially planar surface profile as shown in FIG. 1d or a gradientsurface profile (not shown). As shown in FIG. 1c , a substantiallyco-planar top surface is formed between the PMD layer 130, gatedielectric 152 and metal gate electrode 154. The metal gates may beconfigured to function as word lines (WL) for the OTP based memory cell.

In one embodiment, there is no extension/halo or source/drain (S/D)regions disposed adjacent to the metal gates in the first region 102 a.In one embodiment, one or more well tap regions (not shown) are formedin the doped well 108 of the first region. For example, the well tapregions are formed in the substrate every 8 or 16 bits to ensure lowbit-line resistance. The well tap region includes dopants of a firstpolarity type for a first polarity type doped well. For example, thewell tap region may contain n-type dopants for n-type doped wells. Asfor the second region 102 b, S/D regions (not shown) are disposed in thetop fin portions adjacent to sides of the metal gates. The S/D regionsinclude dopants of a first polarity type for a first polarity typedevice. For example, the S/D regions may contain n-type dopants for ann-type or n-channel device or p-type dopants for a p-type or p-channeldevice. The well tap and S/D regions, in one embodiment, are heavilydoped regions. For example, the dopant concentration of the well tap andS/D regions may be about 10¹⁸-10²⁰ atoms/cm³. Other suitable dopantconcentration may also be useful.

Via contacts or contact plugs (not shown) are disposed in the PMD layer.For example, contact plugs are disposed over contact regions of thememory cell and logic transistor, such as well tap regions, S/D regionsand over the metal gate. The contact plugs, for example, includeconductive material such as tungsten, copper, or alloy thereof. Othersuitable conductive materials may also be useful. For example, contactplugs couple the well tap regions which connect the doped wells thatserve as bitlines of the memory cell and contact plugs couple the metalgates which serve as word lines of the memory cell to interconnectsdisposed in upper interconnect level. As for the second region, contactplugs couple the S/D regions and metal gates to interconnects disposedin upper interconnect level.

FIGS. 2a-2d show various views of another embodiment of a device 200.FIG. 2a shows a simplified top view of a cross-point memory array in afirst region 102 a and top view of logic components in a second region102 b while FIGS. 2b-2d show corresponding cross-sectional views. FIG.2b shows a cross-sectional view of the first region 102 a of the devicetaken along A-A′ and FIG. 2c shows a cross-sectional view of the firstregion taken along B-B′. As for FIG. 2d , it shows a cross-sectionalview of the second region 102 b of the device taken along C-C′. Thedevice 200 is similar to the device 100 and differs from the device 100in one or more aspects. In the interest of brevity, the description ofdevice 200 below primarily focuses on the difference(s) between thedevice 200 and device 100. Common elements or features may not bedescribed or described in detail.

Referring to FIGS. 2a-2d , the substrate 105 includes a plurality of finstructures 110 disposed in the first and second regions 102 a-102 b.Isolation layer 180 having thickness less than the height of the finstructures is also disposed in the first and second regions to isolatethe fin structures. The fin structure 110 has a top fin portion 111which protrudes beyond the top surface 180 a of the isolation layer anda bottom fin portion 112 which is embedded within the isolation layer.

In one embodiment, the entire top fin portion 111 of the fin structures110 in the first region 102 a includes a sharpened tip profile 245 overa top of the fin structures. For example, the channel and non-channelregions of the fin structures 110 in the first region 102 a include thesharpened tip profile 245 over a top of the fin structures 110 as shownin FIGS. 2b-2c . In one embodiment, the top of the fin structures havingthe sharpened tip profile protrudes and extend beyond the top surface ofthe isolation layer 180 as shown in FIG. 2b . The tip over the top ofthe fin structures in the first region 102 a is sufficiently sharp toenable the overlying portion of the interfacial layer of the gatedielectric 152 to breakdown easily during programming relative to thefin structures in the second region 102 b having a substantially planarsurface profile as shown in FIG. 2d or a gradient surface profile (notshown).

Metal gates 250 are disposed over the substrate in the first and secondregions as shown in FIGS. 2a-2d . A metal gate 250, as shown, isdisposed over the channel region of the fin structure 110. The metalgate 250 wraps around and covers exposed top and side surfaces of thefin structure. The metal gate includes a gate dielectric 152 having theinterfacial and high-k dielectric stack and a metal gate electrode 154disposed over the gate dielectric.

In one embodiment, the interfacial and high-k gate dielectric stack 152of the metal gate in the first region 102 a lines the isolation layer180 and the exposed fin structures having the sharpened tip profile 245as shown in FIGS. 2b-2c . The interfacial and high-k dielectric stack152 of the metal gate in the second region 102 b, in one embodiment,lines the isolation layer 180 and the exposed fin structures having thesubstantially planar surface profile as shown in FIG. 2d or a gradientsurface profile (not shown). As shown in FIG. 2c , a substantiallyco-planar top surface is formed between the PMD layer 130, gatedielectric 152 and metal gate electrode 154. The doped wells 108 in thefirst region may be configured to function as bitlines and the metalgates 250 in the first region may be configured to function as wordlines for the OTP based memory cell.

FIGS. 3a-3d show various views of another embodiment of a device 300.FIG. 3a shows a simplified top view of a cross-point memory array in afirst region 102 a and top view of logic components in a second region102 b while FIGS. 3b-3d show corresponding cross-sectional views. FIG.3b shows a cross-sectional view of the first region 102 a of the devicetaken along A-A′ and FIG. 3c shows a cross-sectional view of the firstregion taken along B-B′. As for FIG. 3d , it shows a cross-sectionalview of the second region 102 b of the device taken along C-C′. Thedevice 300 is similar to the device 100 and differs from the device 100in one or more aspects. In the interest of brevity, the description ofdevice 300 below primarily focuses on the difference(s) between thedevice 300 and device 100. Common elements or features may not bedescribed or described in detail.

Referring to FIGS. 3a-3d , the substrate 105 includes a plurality of finstructures 110 disposed in the first and second regions 102 a-102 b.Isolation layer 180 having thickness less than the height of the finstructures is also disposed in the first and second regions to isolatethe fin structures. The fin structure 110 has a top fin portion 111which protrudes beyond the top surface 180 a of the isolation layer anda bottom fin portion 112 which is embedded within the isolation layer.

In one embodiment, epitaxial layer is grown on the entire top finportion 111 (e.g., includes both channel and non-channel regions) of thefin structures 110 in the first region 102 a to form raised or elevatedtop fin portion 310 as shown in FIGS. 3b-3c . As for the second region102 b, epitaxial layer is grown on the non-channel regions of the finstructures to form raised or elevated top fin portion (not shown in FIG.3d ). The raised top fin portion having the epitaxial layer, in oneembodiment, includes a faceted cross-section having a sharpened tipprofile 345 over a top of the fin structures as shown in FIG. 3b . Inone embodiment, the top of the fin structures having the sharpened tipprofile protrudes and extends beyond the top surface of the PMD layer130 in the first region 102 a as shown in FIG. 3b . The tip over theraised top fin portion of the fin structures in the first region 102 ais sufficiently sharp to enable the overlying portion of the interfaciallayer of the gate dielectric 152 to breakdown easily during programmingrelative to the fin structures in the second region 102 b having asubstantially planar surface profile in the channel region as shown inFIG. 3d or a gradient surface profile (not shown) while the non-channelregions of the fin structure include the raised top fin portions havingthe sharpened tip profile (not shown in FIG. 3d ). The raised top finportions over the non-channel regions in the second region, for example,serve as raised S/D regions.

Metal gates 350 are disposed over the substrate in the first and secondregions as shown in FIGS. 3a-3d . A metal gate 350, as shown, isdisposed over the channel region of the fin structure 110. The metalgate 350 wraps around and covers exposed top and side surfaces of thefin structure. The metal gate includes a gate dielectric 152 having theinterfacial and high-k dielectric stack and a metal gate electrode 154disposed over the gate dielectric.

In one embodiment, the interfacial and high-k gate dielectric stack 152of the metal gate in the first region 102 a lines the PMD layer 130 andthe exposed fin structures having the sharpened tip profile 345 as shownin FIGS. 3b-3c . The interfacial and high-k dielectric stack 152 of themetal gate in the second region 102 b, in one embodiment, lines theisolation layer 180 and the exposed fin structures having thesubstantially planar surface profile as shown in FIG. 3d or a gradientsurface profile (not shown). As shown in FIG. 3c , a substantiallyco-planar top surface is formed between the PMD layer 130, gatedielectric 152 and metal gate electrode 154. The doped wells 108 in thefirst region may be configured to function as bitlines and the metalgates 350 in the first region 102 a may be configured to function asword lines for the OTP based memory cell.

FIGS. 4a-4d show various views of another embodiment of a device 400.FIG. 4a shows a simplified top view of a cross-point memory array in afirst region 102 a and top view of logic components in a second region102 b while FIGS. 4b-4d show corresponding cross-sectional views. FIG.4b shows a cross-sectional view of the first region 102 a of the devicetaken along A-A′ and FIG. 4c shows a cross-sectional view of the firstregion taken along B-B′. As for FIG. 4d , it shows a cross-sectionalview of the second region 102 b of the device taken along C-C′. Thedevice 400 is similar to the device 300 and differs from the device 300in one or more aspects. In the interest of brevity, the description ofdevice 400 below primarily focuses on the difference(s) between thedevice 300. Common elements or features may not be described ordescribed in detail.

In one embodiment, epitaxial layer is grown on the entire top finportion 111 (e.g., includes both channel and non-channel regions) of thefin structures 110 in the first and second regions 102 a-102 b to formraised or elevated top fin portions 410. The raised top fin portionhaving the epitaxial layer, in one embodiment, includes a facetedcross-section having a sharpened tip profile 445 over a top of the finstructures as shown in FIGS. 4b and 4d . In one embodiment, the top ofthe fin structures having the sharpened tip profile protrudes andextends beyond the top surface 180 a of the isolation layer in the firstand second regions 102 a-102 b as shown in FIGS. 4b and 4d . The tipover the raised top fin portion of the fin structures in the firstregion 102 a is sufficiently sharp to enable the overlying portion ofthe interfacial layer of the gate dielectric 152 to breakdown easilyduring programming.

Metal gates 450 are disposed over the substrate in the first and secondregions as shown in FIGS. 4a-4d . A metal gate 450, as shown, isdisposed over the channel region of the fin structure 110. The metalgate 450 wraps around and covers exposed top and side surfaces of thefin structure. The metal gate includes a gate dielectric 152 having theinterfacial and high-k dielectric stack and a metal gate electrode 154disposed over the gate dielectric.

In one embodiment, the interfacial and high-k gate dielectric stack 152of the metal gate lines the isolation layer 180 and the exposed finstructures with sharpened tip profile 445 in the first and secondregions as shown in FIGS. 4b and 4d . As shown in FIG. 4c , asubstantially co-planar top surface is formed between the PMD layer 130,gate dielectric 152 and metal gate electrode 154. The doped wells 108 inthe first region may be configured to function as bitlines and the metalgates 450 in the first region may be configured to function as wordlines for the OTP based memory cell.

FIGS. 5a-5c show various views of another embodiment of a device 500.FIG. 5a shows a simplified top view of a cross-point memory array in afirst (or memory) region 102 a of the device. FIG. 5b shows a simplified3-D view of the first region of the device while FIG. 5c shows across-sectional view of the first region taken along A-A′. The device500 is similar to the device 100 and differs from the device 100 in oneor more aspects. In the interest of brevity, the description of device500 below primarily focuses on the difference(s) between the device 500and device 100. Common elements or features may not be described ordescribed in detail.

In one embodiment, the substrate 105 is processed to form a plurality ofnanowires 1110 in the first region 102 a. For simplicity andillustration purpose, only the nanowire portions of the first (ormemory) region 102 a is shown while substrate portions which hold thenanowires in the first region and nanowires in the second region 102 bare omitted from the figures. In one embodiment, the nanowires 1110include a sharpened tip 545 at top of the nanowires as shown in FIGS. 5band 5c . The tip over the top of the nanowires in the first region 102 ais sufficiently sharp to enable the overlying portion of the interfaciallayer of the gate dielectric 152 to breakdown easily during programming.

Metal gate 550 is disposed over the substrate in the first region 102 aand second region 102 b (not shown in FIGS. 5a-5c ). A metal gate 550,as shown, is disposed over the channel region of the nanowires 1110. Themetal gate 550 wraps around and covers exposed top and side surfaces ofthe nanowire. The metal gate includes a gate dielectric 152 having theinterfacial and high-k dielectric stack and a metal gate electrode 154disposed over the gate dielectric.

In one embodiment, the interfacial and high-k gate dielectric stack 152of the metal gate lines the exposed portions of the nanowires having thesharpened tip profile 545 in the first region 102 a as shown in FIGS. 5band 5c . The nanowires 1110 in the first region may be configured tofunction as bitlines and the metal gate 550 in the first region 102 amay be configured to function as word line for the OTP based memorycell.

As described in FIGS. 1a, 2a, 3a, 4a and 5a , the memory array shown isa cross-point anti-fuse based OTP memory array. An OTP memory cell ofthe memory array shown in FIGS. 1a, 2a, 3a, 4a and 5a is programmed byselecting a bit at the intersection of a metal gate and a bitline in adoped well through supplying a higher positive voltage to the metal gatewhich drives the bitline to accumulation. A high electric field iscreated across the gate dielectric which causes dielectric breakdown atthe sharpened tip location. Meanwhile, a lower positive voltage issupplied to unselected word lines and bitlines to prevent disturbance.The gate dielectric breakdown forms a self-rectifying feature withnon-linear I-V characteristics over the doped well at the selected bitwhich serves as a selector. This eliminates the use of selecttransistor, resulting in a simplified OTP array design and smallerbit-cell area.

In addition, the embodiments as described in FIGS. 1a-1d , FIGS. 2a-2d ,FIGS. 3a-3d , FIGS. 4a-4d and FIGS. 5a-5c result in further advantages.As described, at least a portion (e.g., channel region) of the finstructures 110 or nanowires 1110 in the first region 102 a includes asharpened tip profile over a top of the fin structures or nanowires. Thesharpened fin tip is advantageous as it enhances the electric field.Thus, the portion of the interfacial layer of the gate dielectricoverlying the sharpened tip can breakdown easily. Such configurationalso enables lower power consumption and faster speed to be achievedrelative to conventional OTP structures. A reduced programming voltagealso improves the compatibility of power supply with logic devices onthe same substrate.

FIGS. 6a-6h show cross-sectional views of an embodiment of a process 600for forming a device 100. In one embodiment, the process allows memorycells and logic devices to be formed simultaneously on the samesubstrate using logic processing. The memory cell, in one embodiment, isan anti-fuse based OTP memory cell. The device 100 formed, for example,is the same as that shown and described in FIGS. 1a-1d . Common elementsand elements having the same reference numerals may not be described ordescribed in detail.

Referring to FIG. 6a , a substrate 105 is provided. The substrate may bea silicon substrate. The substrate may be lightly doped with secondpolarity type dopants, such as, p-type dopants. Providing other suitabletypes of substrates, including SiGe, Ge and group III-V semiconductorssuch as GaAs, InP and InAs, including substrates doped with other typesof dopants or undoped substrates, are also useful. Other suitable typesof substrate, such as crystalline-on-insulator which includes SOI typeof substrate, may also be useful.

As shown, the substrate may be prepared with at least first and seconddevice regions. In one embodiment, the first region serves as a memoryor array region for a plurality of anti-fuse based OTP memory cells. Thesecond region 102 b, in one embodiment, serves as a logic region forlogic transistors. Although two device regions are shown, it isunderstood that the substrate may include numerous device regions (notshown). The numerous device regions may include different types ofdevice regions for other types of devices.

The substrate 105 is processed to form fin structures 110. In oneembodiment, a fin structure has sufficient length for the body orchannel and non-channel regions of the memory cell or logic transistor,such as that described in, for example, FIGS. 1a-1d . The height of thefin structure should be sufficient to provide top and bottom finportions which serve as a body of the transistor. The height of the fin,for example, may be about 40-50 nm. As for the width, it may be about5-30 nm. Other suitable fin dimensions may also be useful.

Forming the fin structures may be achieved using various methods. Thefin structure, for example, may be formed by patterning the substrate.For example, a patterned hard mask (not shown) is formed over thesubstrate. In one embodiment, a hard mask layer (not shown), such assilicon oxide or silicon nitride, is formed on the substrate 105. Othersuitable types of materials which are selective to the isolation layeras will be described later may also be used as the hard mask layer. Thehard mask layer may be formed by chemical vapor deposition (CVD). Othersuitable types of hard mask or techniques for forming the hard mask mayalso be useful.

The hard mask layer is patterned to correspond to the shape of the finstructures. The patterning of the hard mask layer can be achieved bymask and etch techniques. For example, a patterned soft mask (notshown), such as photoresist, may be used as an etch mask to pattern thehard mask layer. The soft mask may be patterned by photolithography. Toimprove lithographic resolution, an ARC (not shown) may be providedbeneath the photoresist. The pattern of the photoresist is transferredto the hard mask by, for example, an anisotropic etch, such as areactive ion etch (ME). The soft mask is removed. An anisotropic etch,such as RIE, is performed to remove portions of the substrate surfaceunprotected by the hard mask, leaving fin structures 110 in the firstand second regions 102 a-102 b disposed on the top surface of thesubstrate. Other suitable methods may also be employed to form the finstructure. Although two fin structures are formed in each of the firstand second regions, it is understood that other suitable number of finstructures may be formed on the same substrate 105. Depending onprocessing, the fin structure, for example, includes substantiallyplanar surface profile as shown in FIG. 6a or a gradient surface profile(not shown).

The process continues to form an isolation layer. The isolation layer,such as a dielectric layer which includes a silicon oxide layer, isformed over the substrate 105 covering the fin structures 110 in thefirst and second regions 102 a-102 b. Other suitable types of dielectriclayer may also be useful. The isolation layer, for example, may beformed over the substrate using CVD or high aspect ratio process (HARP).Other suitable techniques for forming the isolation layer may also beuseful. In one embodiment, a polishing process, such as a chemicalmechanical polishing process (CMP) is performed to planarize theisolation layer to the top surface of the hard mask (not shown) over thefin structures. A removal process, such as selective to the isolationlayer which includes oxide material, is performed to remove or recessportions of the oxide to form the isolation layer 180 as shown in FIG.6a . The removal process may include dry etch, wet etch or a combinationthereof. The isolation layer, for example, has a height or thicknesssufficient to provide isolation from the substrate below and betweenadjacent fin structures. For example, the isolation layer is recessed toa thickness which is less than the height of the fin structures. Asshown, the fin structure has a top fin portion 111 which protrudesbeyond the top surface 180 a of the isolation layer and a bottom finportion 112 which is embedded within the isolation layer. The thicknessof the isolation layer, for example, may be about 100-500 nm. Othersuitable thickness ranges may also be useful.

Doped wells 108 are formed in the first and second regions 102 a-102 bof the substrate. The doped wells include first polarity type dopants,such as n-type dopants, forming n-type doped wells. In one embodiment,the doped wells are formed to a depth greater than the bottom of theisolation regions. The doped wells may be formed by ion implantationhaving dopant concentration of about 10¹⁷-10¹⁹ atoms/cm³. Other suitabledopant concentrations may also be useful. An implant mask may be used tofacilitate forming the doped wells. A patterned photoresist may be usedas the implant mask. In one embodiment, the doped wells 108 in the firstregion serve as bitlines for the anti-fuse based OTP memory cell.

Referring to FIG. 6b , the process continues to form dummy gate 620. Forexample, a dummy gate dielectric layer and a dummy gate electrode layerare conformally formed over the substrate in the first and secondregions covering the fin structures. In the case of a dummy gate, it maybe formed of any type of material which can be selectively removed fromthe fin and a subsequently formed dielectric layer. For example, thedummy gate electrode layer may include polysilicon while the dummy gatedielectric layer may include silicon nitride or silicon oxide. Othersuitable types of materials may also be used for the dummy gate layers.The dummy gate dielectric and dummy gate electrode layers are patternedto form a patterned gate 620 which serves as a dummy gate in the second(or logic) region 102 b. For example, suitable mask and etch techniquesmay be employed to remove exposed portions of the dummy gate dielectricand dummy gate electrode layers from the first (or memory) region 102 awhile dummy gate dielectric and dummy gate electrode layers protected bythe mask remain and serve as the dummy gate 620 in the second region 102b. The dummy gate, for example, wrap around and traverses the channelregion of the fin structures 110 in the second region 102 b.

The process continues with front-end-of-line (FEOL) logic processing.For example, the process continues to form sidewalls spacers (not shown)and source/drain (S/D) regions (not shown) in the second region and oneor more well tap regions in the first region. The sidewall spacers, forexample, include silicon nitride. Other types of spacer materials, suchas silicon oxide or silicon oxynitride, may also be useful. To formsidewall spacers, a spacer dielectric layer is deposited on thesubstrate. The spacers can be formed by using various techniques, suchas plasma enhanced chemical vapor deposition (PECVD). Other techniquesfor forming the spacer dielectric layer or forming other types ofspacers may also be useful. The spacer dielectric layer isanisotropically etched, such as by RIE, to remove horizontal portions,leaving non-horizontal portions on the sidewalls of the dummy gate asthe spacers.

The process continues, for example, to form S/D regions (not shown) inthe second region and one or more well tap regions in the first region.The S/D regions include first polarity type dopants for first polaritytype device in the second region and the well tap region includes thesame polarity type of dopants as the doped well in the first region. Forexample, the S/D regions may contain n-type dopants for an n-type orn-channel device or p-type dopants for a p-type or p-channel device andthe well tap regions include n-type dopants for n-type doped well. Inone embodiment, the S/D regions in the second region may be formedtogether with the well tap regions in the first region if they includethe same polarity type of dopants. In other embodiments, the S/D regionsin the second region and the well tap regions in the first region may beformed separately if they include different polarity type of dopants.The S/D regions and well tap regions, in one embodiment, are heavilydoped regions. For example, the dopant concentration of the S/D and welltap regions may be about 10¹⁸-10²⁰ atoms/cm³. The heavily doped well tapand S/D regions are formed by, for example, implanting suitable polaritytype dopants using suitable implant mask and ion implantationtechniques. The dopant concentration and process parameters of theimplantation, such as dose and energy, may be appropriately selectedbased on design requirements. The heavily doped well tap and S/D regionsare formed in exposed top fin portion of the fin structures in the firstand second regions. For example, top fin portions of the fin structuresin the first region 102 a not shielded by the implant mask (not shown)and top portion of the fin structures not shielded by the dummy gate inthe second region 102 b are implanted with suitable polarity typedopants to form the heavily doped well tap and S/D regions. Metalsilicide contacts (not shown) may also be formed on the contact regionsof the device, such as the well tap and S/D regions.

A dielectric liner (not shown) may be provided over the substrate. Thedielectric liner, for example, serves as a contact etch stop layerand/or a stress layer. The dielectric liner may be silicon nitride.Other suitable types of dielectric materials for the dielectric linermay also be useful. The dielectric liner, for example, is formed by CVD,covering the fin structures and the dummy gate. Other suitabletechniques for forming the dielectric liner may also be useful.

Referring to FIG. 6c , a dielectric layer 130 is formed on the substratein the first and second regions, covering the fin structures 110 anddummy gate 620. The dielectric layer, for example, serves as a PMDlayer. The dielectric layer, for example, includes a silicon oxide layerand is formed by CVD. Other suitable types of dielectric layer andforming techniques may also be useful. The PMD layer is planarized. Theplanarizing process, for example, is a CMP process. The planarizingprocess removes excess dielectric or PMD layer, forming a planar topsurface and a co-planar top surface (not shown in C-C′ cross section)with the dummy gate 620.

After planarization, the exposed dummy gate 620 in the second region 102b is selectively removed as shown in FIG. 6d . Removal of the dummy gatemay be performed by dry etch, wet etch or a combination thereof. Forexample, a wet etch selective to the dielectric layer 130 (not shown inC-C′ cross section) and sidewall spacers (not shown) may be performed.The dummy gate may be removed by wet etch using different chemistries.Removal of the dummy gate leaves a gate trench or gate opening 632 onthe substrate and exposes portion (e.g., channel regions) of the finstructures 110 in the second region 102 b while the dielectric layer 130protects and covers the other portions of the fin structures in thesecond region and the fin structures in the first region 102 a.

In one embodiment, the process continues to form a protective mask 640in the second region 102 b. The protective mask, for example, includesphotoresist material and fills the gate trench 632 in the second regionas shown in FIG. 6e . Other suitable material may also be used as theprotective mask. In one embodiment, the dielectric layer 130 ispatterned to remove portions of the dielectric layer in the first region102 a. The dielectric layer, for example, may be patterned usingsuitable mask and etch techniques. The patterning process, in oneembodiment, reduces thickness of the dielectric layer and form gateopenings 652 corresponding to locations (e.g., channel region) wheremetal gates will be formed in the first region 102 a later. As shown inFIG. 6f , the patterning process exposes an upper portion of the top finportion 111 of the fin structures while lower portion of the top finportion of the fin structures in the first region 102 a are embeddedwithin the PMD layer. The protective mask 640 protects and covers thefin structures in the second region 102 b as shown in FIG. 6 f.

In one embodiment, the exposed upper portion (e.g., channel region) ofthe fin structures are processed to form a sharpened tip profile 145over a top of the fin structures 110 in the first region 102 a as shownin FIG. 6g . The sharpened tip profile over the top of the finstructures in the first region 102 a, in one embodiment, may be achievedusing suitable etch process such as wet etch, dry etch or a combinationthereof.

In one embodiment, the etch process utilizes a wet etch having chemistrythat is highly selective to a first crystallographic plane of the finstructure relative to a second crystallographic plane of the finstructure. For instance, the wet etch preferentially etches the finstructure based on crystallographic direction. The wet etch, forexample, etches the fin structure much more rapidly along a firstcrystallographic direction to form a sharpened tip profile at the top ofthe fin structure as the etch proceeds much more slowly in othercrystallographic directions. The process parameters and the etchchemistries may be appropriately selected based on crystallographicdirection of the fin and should be selective to the PMD layer. As anexample, the wet etch preferably etches the fin structure much moreslowly along a {111} plane to form the {111} facet as the etch proceedsmuch more rapidly in other crystallographic directions. The wet etchchemistries may include NH₄OH, NH₃OH, TMAH, KOH, NaOH, BTMH or anamine-based etchant. Other suitable process parameters and etchants mayalso be useful. The etch process, for example, substantially proceedsalong the preferred crystallographic plane of the fin structure untilthe desired sharpened tip profile 145 which is sufficiently sharp toenable a later formed interfacial layer of a gate dielectric tobreakdown easily during programming is achieved on the top of the finstructures 110 in the first region 102 a. As shown, the fin structuresin the first region include the sharpened tip profile while the finstructures 110 in the second region 102 b remain unchanged withsubstantially planar surface profile as shown in FIG. 6g or a gradientsurface profile (not shown) as they are protected by the protectivemask.

In an alternate embodiment, the sharpened tip profile 145 may beachieved by employing an anisotropic etch followed by a plasma etch. Asan example, the sharpened tip profile on the top of the fin structuresmay be achieved by performing the anisotropic etch in a KOH solutionfollowed by SF₆ plasma etch. The tip may be further sharpened usingthermal oxidation technique to decrease the cone angle and, thereforeobtain a smaller curvature radii. Other suitable techniques may also beemployed to form the desired tip profile.

The protective mask 640 is removed after forming the desired tip profileon the top of the fin structures in the first region. The protectivemask, for example, may be removed by ashing. Other suitable techniquesmay be employed to remove the protective mask, depending on the materialof the protective mask. The removal of the protective mask, for example,exposes the fin portions in the gate openings in the second region.

The process continues to form high-k metal gate stack layers on thesubstrate and in the gate openings in the first and second regions.Forming the metal gate stack layers includes forming a gate dielectriclayer and a metal gate electrode layer on the substrate and filling thegate openings in the first and second regions. The gate dielectriclayer, in one embodiment, includes an interfacial and a high-k gatedielectric stack. The interfacial and high-k gate dielectric stacklayers line the gate openings and PMD layer. The interfacial layer, forexample, may be SiO₂ and the high-k gate dielectric layer, for example,may be HfO₂, HfSiON, La₂O₃, zirconium oxide or silicates thereof formedby atomic layer deposition (ALD) process. A metal gate electrode layer,such as TaN or TiN, may be formed over the dielectric layers by ALD, CVDor physical vapor deposition (PVD). Other types of gate dielectricmaterials, electrode materials or forming techniques may also be useful.These layers are planarized, forming a planar top surface between thePMD layer 130, gate dielectric 152 and metal gate electrode 154 to formthe metal gate 150 as shown in FIG. 6h . The metal gates are configuredto function as word lines of the anti-fuse based OTP memory cell. Asshown, the interfacial and high-k gate dielectric layers 152 aredisposed over the PMD layer 130 and wrap around the exposed top of thefin structures 110 having the sharpened tip profile 145 in the firstregion 120 a while the interfacial and high-k dielectric layers 152 aredisposed over the isolation layer 180 and wrap around the exposed top ofthe fin structures having substantially planar surface profile as shownin FIG. 6h or a gradient surface profile (not shown) in the secondregion 102 b.

After forming the metal gate, the process continues to form the device.Additional processes may be performed to complete the formation of thedevice. For example, additional processes include forming via contactsor contact plugs to contact regions of the memory cells and logictransistors. For example, contact openings are formed to the exposedcontact regions, such as well tap regions, S/D regions and over themetal gate. Conductive material fills the via openings to form thecontact plugs. For example, the contact plugs couple the well tapregions disposed in the doped wells which serve as bitlines of thememory cell to an upper interconnect level and contact plugs are coupledto metal gates which serve as word lines of the memory cell to the upperinterconnect level. As for the second region, contact plugs couple theS/D regions and metal gate of the logic transistor to an upperinterconnect level. Additional processes may include back-end-of-line(BEOL) process to finish the manufacturing of the device, such asforming of one or more interconnect levels, final passivation, dicing,assembly, packaging and testing. Other processes are also useful.

FIGS. 7a-7f show another embodiment of a process 700 for forming adevice 200. The process 700 is similar to the process 600 shown in FIGS.6a-6h . The device 200 formed, for example, is the same as that shownand described in FIGS. 2a-2d . In the interest of brevity, thedescription below will focus primarily the difference(s) between theseprocesses and common elements and processes may not be described ordescribed in detail.

As shown in FIG. 7a , the substrate is processed at the same stage asthat described in FIG. 6a . For example, the substrate is processed toform fin structures 110 and doped wells 108 in the substrate below thefin structures in the first and second regions 102 a-102 b. Isolationlayer 180 having thickness less than the height of the fin structures isalso formed in the first and second regions to isolate the finstructures.

In one embodiment, the process continues to form a protective mask 740in the second region 102 b as shown in FIG. 7b . The protective mask740, for example, includes the same material as the protective mask 640and is formed by the same technique as described in FIG. 6e . As shown,the protective mask is formed over the isolation layer 180 and coversthe exposed top fin portion 111 of the fin structures in the secondregion 102 b while the top fin portion 111 of the fin structures whichextends over the isolation layer in the first region 102 a is exposedfor further processing.

In one embodiment, the exposed top fin portion 111 (e.g., includingchannel and non-channel regions) of the fin structures in the firstregion 102 a is processed to form a sharpened tip profile 245 over a topof the fin structures 110 in the first region 102 a as shown in FIG. 7c. The sharpened tip profile over the top of the fin structures in thefirst region, in one embodiment, may be achieved using suitable etchprocess such as those described with respect to FIG. 6g above. The etchprocess, for example, utilizes chemistry that is highly selective to afirst crystallographic plane of the fin structure relative to a secondcrystallographic plane of the fin structure. The etch process, forexample, substantially proceeds along the preferred crystallographicplane of the fin structure until the desired sharpened tip profile whichis sufficiently sharp to enable a later formed interfacial layer of agate dielectric to breakdown easily during programming is achieved onthe top of the fin structures in the first region. As shown, the finstructures 110 in the first region 102 a include the desired tip profile245 while the fin structures 110 in the second region 102 b remainunchanged with substantially planar surface profile as shown in FIG. 7cor a gradient surface profile (not shown) as they are protected by theprotective mask 740.

The protective mask is removed after forming the desired sharpened tipprofile on the top of the fin structures in the first region usingsuitable techniques. This exposes top fin portion 111 of the finstructures 110 and isolation layer 180 in the first and second regions.In one embodiment, the process continues to form dummy gates. Forexample, a dummy gate dielectric layer and a dummy gate electrode layerare conformally formed over the substrate in the first and secondregions covering the fin structures as shown in FIG. 7d . Materials andtechniques for forming the dummy gate layers are the same as thatdescribed with respect to FIG. 6b above. In one embodiment, the dummygate layers are patterned to form patterned gates which serve as dummygates 620 in the first and second regions 102 a-102 b. For example,suitable mask and etch techniques may be employed to remove exposedportions of the dummy gate layers from the first and second regions. Thedummy gates, for example, traverse and wrap around the channel region ofthe fin structures in the first and second regions.

The process continues with FEOL logic processing. For example, theprocess continues to form sidewalls spacers (not shown) adjacent tosidewalls of the dummy gates and contact regions in portions of the finstructures not shielded by the dummy gates. The contact regions, forexample, include one or more well tap regions in the first region andS/D regions in the second region. Materials and techniques for formingthe sidewall spacers, well tap regions and S/D regions are the same asthat described with respect to FIG. 6b above. A dielectric or a PMDlayer 130 is formed on the substrate, covering the fin structures 110and dummy gates 620 in the first and second regions 102 a-102 b.Material and technique for forming the PMD layer is the same as thatdescribed with respect to FIG. 6c above. The PMD layer 130 is planarizedto remove excess dielectric or PMD layer, forming a planar top surfaceand a co-planar top surface with the dummy gates 620 in the first andsecond regions 102 a-102 b as shown in FIG. 7 e.

After planarization, the exposed dummy gates in the first and secondregions are selectively removed. Removal of the dummy gates may beachieved using technique as described with respect to FIG. 6d . Removalof the dummy gates form gate openings (not shown) which expose portion(e.g., channel region) of the fin structures in the first and secondregions.

The process continues to form high-k metal gate stack layers on thesubstrate and in the gate openings in the first and second regions 102a-102 b. The metal gate stack layers are planarized, forming a planartop surface between the PMD layer 130, gate dielectric 152 and metalgate electrode 154 as shown in FIG. 7f . Materials and techniques forforming the metal gates 250 are the same as that described with respectto FIG. 6h above. As shown, the interfacial and high-k gate dielectriclayers 152 are disposed over the isolation layer 180 and wrap around theexposed top fin portion 111 of the fin structures 110 having thesharpened tip profile 245 in the first region 102 a while theinterfacial and high-k dielectric layers 152 are disposed over theisolation layer 180 and wrap around the exposed top fin portion 111 ofthe fin structures 110 having substantially planar surface profile or agradient surface profile (not shown) in the second region 102 b.

After forming the metal gate 250, the process continues to complete theformation of the device. For example, additional processes includeforming via contacts or contact plugs to contact regions of the memorycells and logic transistors. Additional processes may include BEOLprocess to finish the manufacturing of the device, such as forming ofone or more interconnect levels, final passivation, dicing, assembly,packaging and testing. Other processes are also useful.

FIGS. 8a-8f show another embodiment of a process 800 for forming adevice 300. The process 800 is similar to the process 600 shown in FIGS.6a-6h . The device 300 formed, for example, is the same as that shownand described in FIGS. 3a-3d . In the interest of brevity, thedescription below will focus primarily the difference(s) between theseprocesses and common elements and processes may not be described ordescribed in detail.

As shown in FIG. 8a , the substrate is processed at the same stage asthat described in FIG. 6b . For example, the substrate 105 is processedto form fin structures 110 and doped wells 108 in the substrate belowthe fin structures in the first and second regions 102 a-102 b.Isolation layer 180 having thickness less than the height of the finstructures is also formed in the first and second regions to isolate thefin structures. Dummy gates 620 are defined and formed in the second (orlogic) region 102 b and sidewall spacers (not shown) are formed adjacentto the dummy gates.

In one embodiment, the process continues by forming epitaxial layer overexposed top fin portion 111 of the fin structures 110 in the first andsecond regions 102 a-102 b. The epitaxial layers are formed by selectiveepitaxial growth (SEG) process to form raised or elevated top finportion 310. The SEG selectively forms crystalline epitaxial layer onthe entire exposed top fin portion of the fin structures in the firstregion 102 a and forms crystalline epitaxial layers on exposed top finportion of the fin structures not shielded by the dummy gate 620 in thesecond region 102 b. As shown in FIG. 8b , the raised top fin portion310 has a faceted cross-section profile, due to different growth rate atdifferent crystallographic orientation of the surfaces of the fin. Forexample, the epitaxial layer grows much more rapidly along a firstcrystallographic orientation of the fin structure to form a sharpenedtip profile 345 at the top of the fin structures 110 and much moreslowly in other crystallographic orientation of the fin. Thus, byunderstanding the different growth rates of the epitaxial layer atdifferent crystal orientations of the fin structure, the processparameters of the SEG process may be appropriately selected to form thedesired sharpened tip profile at the top of the fin structures. Asshown, the raised top fin portion with the sharpened tip profile isformed throughout the entire exposed top fin portion 111 of the finstructures 110 in the first region 102 a while the raised top finportion with sharpened tip profile (not shown) is formed on exposed topfin portion of the fin structures not covered by the dummy gates 620 inthe second region 102 b.

The height of the raised top fin portion having epitaxial layer with thefaceted cross-section and a sharpened tip profile should be below thetop surface of the dummy gate 620. The process may continue to form oneor more well tap regions in the first region and S/D regions in thesecond region. An implant mask may be employed to form the well tap andS/D regions. Exposed raised top fin portion not covered by the implantmask, for example, are heavily doped with suitable polarity type dopantsto form raised well tap and S/D regions. For example, raised top finportion of the fin structures in the first region not shielded by theimplant mask and raised top fin portion of the fin structures notshielded by the dummy gate in the second region are implanted withsuitable polarity type dopants to form the heavily doped well tap andS/D regions. The well tap and S/D regions may be formed simultaneouslyif they include the same polarity type of dopants. Alternatively, thewell tap and S/D regions may be formed in separate steps if they includedopants of opposite polarity types. The dopants may be incorporated intothe raised portions by in-situ doping. Other suitable techniques forincorporating the dopants into the raised portions may also be useful.

A dielectric liner (not shown) which serves as a contact etch stop layerand/or stress layer may be formed over the substrate covering the finstructures and the dummy gates. A PMD layer 130 is formed on thesubstrate, covering the fin structures and dummy gates in the first andsecond regions as shown in FIG. 8c . Material and technique for formingthe PMD layer are the same as that described with respect to FIG. 6cabove. The PMD layer 130 is planarized to remove excess PMD layer,forming a planar top surface and a co-planar top surface with the dummygates 620 in the second region 102 b as shown in FIG. 8 c.

After planarization, the exposed dummy gates 620 in the second region102 b are selectively removed as shown in FIG. 8d . Removal of the dummygates may be achieved using technique as described with respect to FIG.6d . Removal of the dummy gates form gate openings 832 which exposeportion (e.g., channel region) of the fin structures havingsubstantially planar surface profile or a gradient surface profile (notshown) in the second regions.

Referring to FIG. 8e , the process continues to form a protective mask840 in the second region 102 b similar to that described with respect toFIG. 6e . The protective mask, for example, includes photoresistmaterial and fills the gate openings 832 in the second region. In oneembodiment, the dielectric layer 130 is patterned to remove portions ofthe dielectric layer in the first region 102 a. The patterning process,in one embodiment, reduces thickness of the PMD layer and form gateopenings 852 corresponding to locations (e.g., channel region) wheremetal gates will be formed in the first region later. As shown in FIG.8e , the patterning process exposes upper portion of the raised top finportion with a faceted cross-section profile in the channel region ofthe fin structures in the first region while lower portion of the raisedtop fin portion are embedded in the remaining PMD layer 130. Thus, theupper portion of the raised top fin portion has a sharpened tip profile345 which is protruded over the PMD layer in the first region 102 a. Thetip over the raised top fin portion of the fin structures in the firstregion is sufficiently sharp to enable a later formed interfacial layerof a gate dielectric to breakdown easily during programming. As for thesecond region 102 b, the protective mask 840 protects and covers the finstructures having substantially planar surface profile in the secondregion as shown in FIG. 8e or a gradient surface profile (not shown).

The protective mask 840 is removed using suitable technique afterpatterning the PMD layer 130. The process continues to form high-k metalgate stack layers on the substrate and in the gate openings 852 and 832in the first and second regions. The metal gate stack layers areplanarized, forming a planar top surface between the PMD layer 130, gatedielectric 152 and metal gate electrode 154 as shown in FIG. 8f .Materials and techniques for forming the metal gates 350 are the same asthat described with respect to FIG. 6h above. As shown, the interfacialand high-k gate dielectric layers 152 are disposed over the PMD layerand wrap around the exposed top of the fin structures having thesharpened tip profile 345 in the first region 102 a while theinterfacial and high-k dielectric layers 152 are disposed over theisolation layer 180 and wrap around the exposed top of the finstructures having substantially planar surface profile or a gradientsurface profile (not shown) in the second region.

After forming the metal gate 350, the process continues to complete theformation of the device. For example, additional processes includeforming via contacts or contact plugs to contact regions of the memorycells and logic transistors, BEOL process to finish the manufacturing ofthe device, such as forming of one or more interconnect levels, finalpassivation, dicing, assembly, packaging and testing. Other processesare also useful.

FIGS. 9a-9e show another embodiment of a process 900 for forming adevice 400. The process 900 is similar to the process 600 and 800 shownin FIGS. 6a-6h and FIGS. 8a-8f The device 400 formed, for example, isthe same as that shown and described in FIGS. 4a-4d . In the interest ofbrevity, the description below will focus primarily the difference(s)between these processes and common elements and processes may not bedescribed or described in detail.

As shown in FIG. 9a , the substrate is processed at the same stage asthat described in FIG. 6a . For example, the substrate is processed toform fin structures 110 and doped wells 108 in the substrate below thefin structures in the first and second regions 102 a-102 b. Isolationlayer 180 having thickness less than the height of the fin structures isalso formed in the first and second regions to isolate the finstructures.

In one embodiment, the process continues by forming epitaxial layer overexposed top fin portion 111 of the fin structures 110 in the first andsecond regions 102 a-102 b. The epitaxial layer is formed by SEG processas described with respect to FIG. 8b . In one embodiment, the SEGselectively forms crystalline epitaxial layer on the entire exposed topfin portion 111 of the fin structures 110 to form raised top fin portion410 in the first and second regions 102 a-102 b. As shown in FIG. 9b ,the raised top fin portion 410 has a faceted cross-section profile, dueto different growth rate at different crystallographic orientation ofthe surfaces of the fin. As shown, the raised top fin portion withepitaxial layer having a sharpened tip profile 445 is formed throughoutthe entire exposed top fin portion (e.g., including channel andnon-channel regions) of the fin structures in the first and secondregions 102 a-102 b.

Referring to FIG. 9c , the process continues to form dummy gates 620.For example, a dummy gate dielectric layer and a dummy gate electrodelayer are conformally formed over the isolation layer in the first andsecond regions 102 a-102 b and cover the fin structures with raised topfin portion 410 as shown in FIG. 9c . Materials and techniques forforming the dummy gate layers are the same as that described withrespect to FIG. 6b above. In one embodiment, the dummy gate layers arepatterned using suitable mask and etch techniques to form patternedgates which serve as dummy gates 620 in the first and second regions.The dummy gates, for example, traverse and wrap around the raisedportions having faceted cross-section profile in the channel region ofthe fin structures in the first and second regions.

The process continues with FEOL logic processing. For example, theprocess continues to form sidewalls spacers (not shown) adjacent tosidewalls of the dummy gates 620 and contact regions in exposed raisedtop fin portions of the fin structures not shielded by the dummy gates.For example, the contact regions include one or more well tap regions inthe first region and S/D regions in the second region. Materials andtechniques for forming the sidewall spacers and heavily doped raisedwell tap and S/D regions are the same as that described with respect toFIG. 8b above. A PMD layer 130 is formed on the substrate, covering theraised top fin portions and dummy gates in the first and second regions.Material and technique for forming the PMD layer is the same as thatdescribed with respect to FIG. 6c above. The PMD layer is planarized toremove excess dielectric or PMD layer, forming a planar top surface anda co-planar top surface with the dummy gates 620 in the first and secondregions as shown in FIG. 9 d.

After planarization, the exposed dummy gates in the first and secondregions are selectively removed. Removal of the dummy gates may beachieved using technique as described with respect to FIG. 6d . Removalof the dummy gates form gate openings which expose portion of the raisedportion (e.g., channel region) of the fin structures in the first andsecond regions.

The process continues to form high-k metal gate stack layers on thesubstrate and in the gate openings in the first and second regions. Themetal gate stack layers are planarized, forming a planar top surfacebetween the PMD layer 130, gate dielectric 152 and metal gate electrode154 as shown in FIG. 9e . Materials and techniques for forming the metalgates 450 are the same as that described with respect to FIG. 6h above.As shown, the interfacial and high-k gate dielectric layers 152 aredisposed over the isolation layer 180 and wrap around the exposed topportion of the fin structures with raised portion having a sharpened tipprofile in the first and second regions as shown in FIG. 9 e.

After forming the metal gate 450, the process continues to complete theformation of the device. For example, additional processes includeforming via contacts or contact plugs to contact regions of the memorycells and logic transistors, BEOL process to finish the manufacturing ofthe device, such as forming of one or more interconnect levels, finalpassivation, dicing, assembly, packaging and testing. Other processesare also useful.

FIGS. 10a-10b show another embodiment of a process 1000 for forming adevice 500. The process 1000 is similar to the process 600 shown inFIGS. 6a-6h . The device 500 formed, for example, is the same as thatshown and described in FIGS. 5a-5c . In the interest of brevity, thedescription below will focus primarily the difference(s) between theseprocesses and common elements and processes may not be described ordescribed in detail.

FIG. 10a shows a simplified 3-D view of a portion of a device. Forsimplicity and illustration purpose, only the nanowire portions of thefirst (or memory) region 102 a is shown while substrate portions whichhold the nanowires in the first region and the second region 102 b withlogic transistors are omitted. In one embodiment, the nanowires 1110include a sharpened tip 545 at top of the nanowires as shown in FIG. 10a. The nanowires are in-situ doped with, for example, n-type dopants, andconfigured to serve as bitlines of the OTP anti-fuse based memory cell.

By way of example, the nanowires may be formed using a top-downapproach. For example, a combination of suitable etch and oxidationprocesses may be utilized to process the fin structures as shown in FIG.6g above to form the nanowires with the desired tip profile 545 which issufficiently sharp to enable a later formed interfacial layer of a gatedielectric to breakdown easily during programming as shown in FIG. 10a .The nanowire with the desired sharpened tip profile can be formed usingsuitable etch process with suitable etch chemistries to reduce the widthof the fin structure and to create slanted fin sidewalls and performingsuitable oxidation process to grow an oxide layer on the fin sidewallsto suspend the nanowires. In one embodiment, the etch and oxidationprocesses are highly selective to a first crystallographic plane of thefin structure relative to a second crystallographic plane of the finstructure. For example, the etch and oxidation processes may be tailoredsuch that material of the fin structure is consumed much more rapidlyalong a first crystallographic direction at the top surface of the finstructure to form a sharpened tip profile at the top of the finstructure and consumes much more slowly in other crystallographicdirections at sidewalls of the fin structure. A stripping process usingsuitable chemistry is conducted thereafter to remove the oxide layer andsuspend the nanowires from the substrate (not shown). The nanowires withthe desired sharpened tip profile at the top of the nanowires are formedin the first and second regions.

Although a top-down approach is illustrated, it is understood that thenanowires with the desired tip profile may be formed using varioussuitable techniques, including a bottom-up approach. For example, acombination of suitable epitaxial growth, deposition and annealingprocesses may be utilized to process the fin structures as shown in FIG.6a above to form the nanowires with the desired tip profile 545 as shownin FIG. 10a . For illustration purpose, the nanowires are formed byprocessing fin structures as described above. However, it is understoodthat nanowires with the desired tip profile may be formed using othersuitable techniques, which include techniques without processing finstructures.

The process continues to form high-k metal gate stack layers on thesubstrate in the first and second regions. Forming the metal gate stacklayers includes forming a gate dielectric layer and a metal gateelectrode layer on the substrate in the first and second regions. Thegate dielectric layer, in one embodiment, includes an interfacial and ahigh-k gate dielectric stack 152. The interfacial and high-k gatedielectric stack layers 152, in one embodiment, wraps around thenanowires 1110 and are formed by ALD. The interfacial and high-k gatedielectric layers include materials which are the same as that describedin FIG. 6h above. As shown, the interfacial and high-k gate dielectriclayers 152 wrap around the nanowires having the desired tip profile 545at top of the nanowires. A metal gate electrode layer 154, such as TaNor TiN, may be formed over the dielectric layers and the substrate byALD, CVD or physical vapor deposition (PVD). Other types of gatedielectric materials, electrode materials or forming techniques may alsobe useful. The high-k metal gate stack layers are patterned to form apatterned metal gate electrode 550 in the first region 102 a. Forexample, suitable mask and etch techniques may be employed to removeexposed portions of the high-k metal gate stack layers from the firstregion. The metal gate 550, for example, wraps around and traverses thenanowires in the first region as shown in FIG. 10 b.

After forming the metal gate 550, the process continues to complete theformation of the device. For example, additional processes includeforming via contacts or contact plugs to contact regions of the memorycells and logic transistors, BEOL process to finish the manufacturing ofthe device, such as forming of one or more interconnect levels, finalpassivation, dicing, assembly, packaging and testing. Other processesare also useful.

The embodiments as described in FIGS. 6a-6h , FIGS. 7a-7f , FIGS. 8a-8f, FIGS. 9a-9e and FIGS. 10a-10b include similar or the same advantagesas described with respect to FIGS. 1a-1d , FIGS. 2a-2d , FIGS. 3a-3d ,FIGS. 4a-4d and FIGS. 5a-5c above. Moreover, the processes as describedin this disclosure enable the desired tip profile which is sufficientlysharp to enable a later formed interfacial layer of a gate dielectric tobreakdown easily during programming to be achieved at top of the finstructures or nanowires, allowing low power embedded anti-fuse based OTPstructures to be formed. Furthermore, the processes as described allowthe anti-fuse based OTP cell to be formed together or simultaneouslywith the logic transistors on the same substrate. Some of theseprocesses do not require additional mask for embedding the anti-fusebased OTP structure with logic device. Thus, the processes as describedare simplified and are more cost effective relative to conventionalprocesses. Additionally, the processes to embed the OTP cell are highlycompatible and easily integrated with logic processing.

The invention may be embodied in other specific forms without departingfrom the spirit or essential characteristics thereof. The foregoingembodiments, therefore, are to be considered in all respectsillustrative rather than limiting the invention described herein. Scopeof the invention is thus indicated by the appended claims, rather thanby the foregoing description, and all changes that come within themeaning and range of equivalency of the claims are intended to beembraced therein.

What is claimed is:
 1. A FinFET device comprising: a semiconductorsubstrate of a first semiconductor material, wherein the semiconductorsubstrate comprises a memory device region for accommodating an array ofmemory cells; a fin structure of the first semiconductor materialoverlying the semiconductor substrate, wherein the fin structure isdisposed in the memory device region and extends along a firstdirection, wherein the fin structure comprises a channel region and anon-channel region defined along a length of a top fin portion; a gatestructure disposed over the fin structure, wherein the gate structurescomprises a gate electrode layer and a gate dielectric layer, whereinthe gate structure extends along a second direction perpendicular to thefirst direction; an isolation layer disposed on the substrate and belowthe top fin portion of the fin structure; and wherein the fin structurein the memory device region comprises a sharpened tip profile extendingcontinuously throughout the channel and non-channel regions.
 2. TheFinFET device of claim 1 wherein the sharpened tip profile extendsthroughout the top fin portion.
 3. The FinFET device of claim 1 whereinthe gate dielectric layer wraps around the channel region of the finstructure in the memory device region and covers the sharpened tipprofile of the top fin portion.
 4. The FinFET device of claim 3 whereinthe non-channel region of the fin structure in the memory device regioncomprises first and second heavily doped source/drain (S/D) regionsdisposed adjacent to the channel region.
 5. The FinFET device of claim 1wherein the top fin portion comprises an epitaxial layer having afaceted cross-section profile which defines the sharpened tip profile,wherein the fin structure extends into the epitaxial layer.
 6. TheFinFET device of claim 5 wherein the epitaxial layer defines the top finportion and the faceted cross-section profile traverses the channel andnon-channel regions of the fin structure in the first region.
 7. TheFinFET device of claim 1 wherein the semiconductor substrate comprises alogic device region for accommodating a logic transistor, wherein a finstructure is disposed in the logic device region, wherein a top finportion of the fin structure in the logic device region and the top finportion of the fin structure in the memory device region comprises asame epitaxial layer having a faceted cross-section profile, wherein thefaceted cross-section profile of the epitaxial layer defines thesharpened tip profile of the fin structure in the memory device region.8. The FinFET device of claim 7 wherein the faceted cross-sectionprofile of the epitaxial layer extends throughout a channel region and anon-channel region of the top fin portion of the fin structure in thelogic device region.
 9. The device of claim 1 wherein the top finportion of the fin structure in the memory device region comprisesslanted sidewalls which define the sharpened tip profile, wherein theslanted sidewalls of the top fin portion extend along a gradient to atop of the sharpened tip profile.
 10. A device comprising: a substrateprepared with a first region for accommodating an anti-fuse based memorycell and a second region for accommodating a logic transistor; a firstfin structure disposed in the first region and a second fin structuredisposed in the second region, wherein each of the fin structurescomprises top and bottom fin portions, wherein channel and non-channelregions are defined along a length of the top fin portion of each finstructure, wherein a sharpened tip profile extends continuouslythroughout the top fin portion of the first fin structure; an isolationlayer disposed on the substrate, wherein the isolation layer comprises atop isolation surface disposed below the top fin portion of the firstand second fin structures; and a gate structure having a gate dielectriclayer and a gate electrode layer disposed over the substrate, whereinthe gate structure is disposed over the first and second fin structures,wherein the gate dielectric layer wraps around the channel region of thefirst and second fin structures, wherein the gate dielectric layercovers the sharpened tip profile of the top fin portion of the first finstructure.
 11. The device of claim 10 wherein the non-channel region ofthe first fin structure comprises one or more heavily doped source/drain(S/D) region having the sharpened tip profile.
 12. The device of claim10 wherein the sharpened tip profile is disposed in the channel andnon-channel regions of the first fin structure.
 13. The device of claim10 wherein the channel region of the second fin structure comprises asubstantially planar surface profile.
 14. The device of claim 10 whereinthe top fin portion of the first fin structure comprises an epitaxiallayer extending along the channel and non-channel regions, wherein theepitaxial layer comprises a faceted cross-section which defines thesharpened tip profile.
 15. The device of claim 14 wherein the top finportion of the second fin structure comprises an epitaxial layer havinga faceted cross-section extending continuously throughout.
 16. Thedevice of claim 14 wherein the top fin portion of the second finstructure comprises an epitaxial layer having a faceted cross-sectionextending along the non-channel region.
 17. The device of claim 16wherein the channel region of the second fin structure comprises asubstantially planar surface profile.
 18. A FinFET device comprising: asemiconductor substrate of a first semiconductor material, wherein thesemiconductor substrate comprises a memory device region foraccommodating an array of memory cells; a fin structure of the firstsemiconductor material overlying the semiconductor substrate, whereinthe fin structure is disposed in the memory device region and extendsalong a first direction, wherein the fin structure in the memory deviceregion comprises a sharpened tip profile extending continuously in thefirst direction throughout a top fin portion of the fin structure; ametal gate structure disposed over the fin structure, wherein the metalgate structure comprises a metal gate electrode layer over a gatedielectric layer, wherein the metal gate structure extends along asecond direction perpendicular to the first direction; and wherein thegate dielectric layer wraps around and covers the sharpened tip profileof the fin structure.
 19. The FinFET device of claim 18 wherein the topfin portion of the fin structure is in the form of a nanowire, whereinthe nanowire comprises slanted sidewalls which extend along a gradientto define the sharpened tip profile at a top of the nanowire.
 20. TheFinFET device of claim 19 wherein the gate dielectric layer comprises anoxide layer and a high-k dielectric layer.